Abstract
We present data on strong carrier-induced antiguiding present in strained-layer InGaAs-GaAs-AlGaAs lasers. We calculate a value of 12.9 for the Petermann K factor, and a corresponding antiguiding factor of b=6.4. The magnitude of the carrier-induced index depression in the well is estimated to range with drive current from 0.032 to 0.41. In all cases, the antiguiding is much stronger than reported for similar GaAs-AlGaAs lasers. In addition, we show that emission from short cavity devices occurs from two distinct transitions, with emission from the GaAs barriers contributing a single peak to the far field, and emission from the InGaAs well contributing two lobes. The result is a three-lobed far-field pattern at laser threshold of the GaAs barrier emission.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
