Abstract
The pursuit of higher densities in binary storage media is facing serious operating limitations. In order to overcome these constraints, several multistate techniques have been investigated as alternatives. Here, we report on an approach to define multistate switching memory units based on magnetic nanostructures exhibiting exchange bias. Writing and reading conditions were studied in patterned antiferromagnetic/ferromagnetic thin films. We establish the necessary and sufficient requirements for this multidigit memory concept that might open up new possibilities for the exploration and design of suitable room temperature spintronic devices.
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