Abstract
Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III–V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.
Highlights
Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz
Prospect of transferring the only very recent scientific discovery8 of the electrical control of AFs from laboratory experiments to future practical internet of things (IoT) applications, we start in the first part by describing our implementation of the multi-level CuMnAs bit-cell in a standard printed circuit board (PCB)
Our elementary-shape micron-size bit cells can act as a multi-level memory-counter over the entire range of electrical pulse lengths downscaled to B100 ps
Summary
Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. The complete absence of electromagnets or reference permanent magnets in this most advanced physical scheme for writing in ferromagnetic spintronics has served as the key for introducing the physical concept for the efficient control of magnetic moments in antiferromagnets (AFs) that underpins our work. In their simplest form, compensated AFs have north poles of half of the microscopic atomic moments pointing in one direction and the other half in the opposite direction. The components we perceive are multi-level AF bit-cell chips with each bit-cell integrating memory and pulse-counter functionalities
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