Abstract
Field-driven transition from antiferroelectric (AFE) to ferroelectric (FE) states has gained extensive attention for microelectronics and energy storage applications. High dielectric-breakdown-strength (DBDS) for a given material is a necessity to attain full capacity of electrical energy storage. An approach to increasing energy performances is to modulate the related materials to own a higher phase transition electric field (EFE-AFE) using elemental dopants. In this case, Cd2+ was selected as the dopant at A-site in the Pb0.97La0.02Zr0.50Sn0.45Ti0.05O3 ceramics to tailor this EFE-AFE value due to the ionic difference enhanced antiferroelectricity. Surprisingly, the doped ceramics increased EFE-AFE by half, DBDS by 16 %, and maintained energy storage efficiency η of over 85 %, providing a way to improve energy storage density. It is worth mentioning that while the performance has been improved, the sintering temperature has been reduced by 170 °C. At the same time, the ceramics maintain good temperature stability, extremely fast discharging speed and discharging energy storage density, indicative of a promising choice in pulse power devices.
Published Version
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