Abstract
Investigations of photoluminescence and Raman scattering in ternary Zn1–xMgxSe compounds at 4.2 K were performed both in the Stokes and anti-Stokes regions using the cw laser excitation with various wavelengths in the transparency band of the crystals. The anti-Stokes luminescence was observed for the first time in ternary Zn1–xMgxSe compounds. We suggest that the anti-Stokes emission is generated by the two-step excitation via deep-level centers. The low-temperature anti-Stokes photoluminescence is found to be a common property of the wide gap semiconductors and can probe the spatial distribution profiles of impurities in a volume of crystals.
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