Abstract
The anti-Stokes' mechanism of photo-excitation in the smaller band-gap region, followed by radiative recombination in the larger band-gap region is considered. For transport by diffusion the additional photon energy originates from thermal energy; for transport in applied electrical fields, from electrical energy. The requirements on band edge gradients, carrier lifetimes, mobilities, and applied field for the photon conversion are analyzed. A graded heterojunction with a position-independent majority carrier density permits the formation of a uniform applied electric field which can enhance the motion of minority carriers into the larger band-gap region.
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