Estimation of minority carrier lifetime in InGaN single junction solar cell

Md Zahangir Alom,Abdullah M Dobaie,Md Soyaeb Hasan,Ibrahim Mustafa Mehedi,Md Rafiqul Islam

doi:10.1109/ceee.2015.7428271

Estimation of minority carrier lifetime in InGaN single junction solar cell

Md Zahangir Alom, Abdullah M Dobaie + Show 3 more

https://doi.org/10.1109/ceee.2015.7428271

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Publication Date: Nov 1, 2015

Citations: 2

Affiliation: Khulna University of Engineering and Technology, King Abdulaziz University

#Radiative Recombination #Carrier Lifetime + Show 8 more

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Abstract

The parameters that influence the performance of solar cell, minority carrier lifetime is a crucial one. The increase of minority carrier lifetime results in higher conversion efficiency. Minority carrier lifetime is determined and analyzed for InGaN single junction solar cell at different excess carrier concentrations by considering the effect of radiative, Auger, Shockley-Read-Hall (SRH) and surface recombination. Since InGaN is a direct bandgap material it is found that radiative recombination is the dominating mechanism for determining the minority carrier lifetime.

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