Anti-Reflection Characteristics of Si Nanowires for Enhanced Photoluminescence from CdTe/CdS Quantum Dots**Supported by the Qing Lan Project of the Higher Education Institutions of Jiangsu Province, Qing Lan Project of Yangzhou Polytechnic Institute, the Natural Science Foundation of Yangzhou City under Grant No YZ2016123, and the National Natural Science Foundation of China under Grant No 61376004.

Abstract

CdTe/CdS quantum dots (QDs) are fabricated on Si nanowires (NWs) substrates with and without Au nanoparticles (NPs). The formation of Au NPs on Si NWs can be certified as shown in scanning electron microscopy images. The optical properties of samples are also investigated. It is interesting to find that the photoluminescence (PL) intensity of CdTe/CdS QD films on Si nanowire substrates with Au NPs is significantly increased, which can reach 8-fold higher than that of samples on planar Si without Au NPs. The results of finite-difference time-domain simulation indicate that Au NPs induce stronger localization of electric field and then boost the PL intensity of QDs nearby. Furthermore, the time-resolved luminescence decay curve shows the PL lifetime, which is about 5.5 ns at the emission peaks of QD films on planar, increasing from 1.8 ns of QD films on Si NWs to 4.7 ns after introducing Au NPs into Si NWs.