Abstract
A mathematical model for the effect of oxide thickness on ambient conduction is provided in the Schottky Barrier Carbon Nanotubes (CNTs) Field Effect Transistor (SB-CNTFET). To develop them as the future of IC (integrated circuit) technology, the suppression of ambipolar behaviour in SB-CNTFET is imperative. The ambipolar nature of SB-CNTFET contributes to a high amount of leakage current. tox ≈ 49.91nm uses a dielectric of gate oxide with a thickness to inhibit the ambipolar behaviour. In an SB-CNTFET, the conductance is regulated by the electrical field at the source/drain contacts and the band bending length at the contacts is determined by tox. Therefore, the prime parameter tox that affects the Schottky barrier width and the subthreshold area. The suppression of ambipolar property is presented. The SB-CNTFET is produced using high-K dielectrics such as Zirconium dioxide. This work discusses the suppression of ambipolar activity in SB-CNTFETs without reducing the Ion current using an appropriate dielectric with optimum thickness.
Highlights
The emerging trend towards the Internet of Things (IoT) has increased the demand of scaled-down low power devices with high-performance [1], [31], [3], [7], [10].This need is addressed by the growth of nano-electronic devices based on novel materials such as semiconducting carbon nanotubes (CNTs) [36] with their outstanding nanoscale carrier mobility [8]
It is the electric field at the source/drain contacts that regulate the conductance in an Schottky Barrier (SB) carbon nanotube field effect transistors (CNTFETs), and tox defines the band bending length at the contacts
We propose a technique of optimization based on Ant lion optimization (ALO) to suppress ambipolar behaviour
Summary
The emerging trend towards the Internet of Things (IoT) has increased the demand of scaled-down low power devices with high-performance [1], [31], [3], [7], [10]. The absence of control over that portion of the channel makes the SB thick on the side of the source/drain, suppressing ambipolar behaviour. All of these approaches focus on advanced fabrication techniques. The charge in the silicon MOSFET channel is affected by tox through gate capacitance which affects the conductance in the ON state It is the electric field at the source/drain contacts that regulate the conductance in an SB CNTFET, and tox defines the band bending length at the contacts. The shrinking boundaries of the pit, on the other hand, ensure successful utilisation
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