Abstract
The thermoelectric power of Bi/Sb multilayer films grown on single-crystal Si(111) substrates or on BaF 2(111) cleaved surfaces by molecular beam epitaxy method has been measured. An anomalously large negative thermoelectric power was observed on films deposited on Si around room temperature and above, but not on those deposited on BaF 2. A possibility of ZT > 1 was suggested.
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