Anomalous temperature dependence of growth rate of GaAs grown by trimethylgallium and arsine molecular beams and two competing growth mechanisms

Abstract

The growth rate of GaAs layers grown by the metalorganic molecular beam epitaxy technique using trimethylgallium (TMGa) and arsine (AsH 3) was precisely measured by the intensity oscillation of the reflection high energy electron diffraction (RHEED). The growth rate shows an anomalous dependence on the substrate temperature, which has two humps. It is considered that two competing reaction processes work on the GaAs growth.