Anomalous temperature dependence observed on the photovoltage of Se-based amorphous thin film–SnO2 heterostructures

Abstract

The temperature dependence of the photovoltage of Se-based amorphous thin film–SnO2 heterostructures has been studied over a temperature range of 77–393 °K. An anomalous temperature dependence of the photovoltage was observed, i.e., for a constant light intensity, the photovoltage initially increases with increasing temperature, reaches a maximum value at some temperature, and therefore decreases with further increase in temperature.