Abstract
The effects of field inhomogeneities on photoconductivity were investigated by measuring the current of amorphous silicon field effect transistors during illumination for various gate voltages. The photocurrent was nearly independent of light intensity, and the decay time increases to ∼1 sec for large band bending. The photocurrent characteristics of a gap electrode sample are the same as a transistor with a 1 V gate voltage. The results suggest that the gap cell photocurrent is affected by surface fields.
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