Abstract
Sb + ions were implanted into heavily As-doped bulk silicon and As + ions were implanted into heavily Sb-doped bulk silicon. Subsequent high-temperature annealing indicated the loss of Sb atoms. For the samples implanted with antimony the amount of lost Sb depends on the implanted dose. In comparison, the arsenic concentration in both samples remained constant and no abnormal loss of arsenic was evident during the high-temperature anneal.
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