Abstract
An n +-GaAs/n −-GaAs/n-In 0.2Ga 0.8As/i-GaAs field-effect transistor (FET) structure has been fabricated and studied. An anomalous three-terminal-controlled negative-differential-resistance (NDR) phenomenon resulting from the real-space transfer effect is observed. This N-shaped NDR behavior is found in the higher drain-to-source voltage ( V DS) regime. Furthermore, the NDR is obtained at positive and negative gate-to-source bias ( V GS). The influence of V GSbias on the NDR characteristics is investigated.
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