Abstract
An examination of majority-carrier deep level transient spectroscopy (DLTS) spectra for GaAs with filling pulse heights in the vicinity of the flat-band voltage has revealed a subtle anomalous peak with the ‘‘correct’’ sign: one that would normally be associated with emission from a majority-carrier trap. A model is presented which explains the peak as one of a class of peaks due to minority-carrier capture into a minority-carrier trap. Good agreement is found between the experimental and calculated trap signatures (T2τ vs 1/T) assuming the minority-carrier trap to be Fe (a residual impurity which is observed in optical DLTS spectra on the same sample). The importance of using optical DLTS data to assist in properly interpreting the majority-carrier DLTS spectra is stressed.
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