Abstract
The origin of anomalous negative magnetoresistance and its temperature dependence in polycrystalline Ni–Mn–Ga films prepared by pulse laser deposition was studied. The investigation of structural, transports, magnetic, and ferromagnetic resonance properties of the films suggests contributions of different mechanisms in magnetotransport. At low magnetic fields the main contribution to magnetoresistance is due to the transport between the areas with different orientation of magnetic moments, while at high fields it is an electron scattering of in spin-disordered areas.
Highlights
OCTOBER 2004Golub,a) Andriy Ya. Vovk,a) Leszek Malkinski, and Charles J
Recently2–5 it has been shown that continuous films of NiMnGa and some other Heusler alloys demonstrate negative magnetoresistance effect
The values of about −1.2% in magnetic field 10 kOe at T = 23 K were reported2 for Ni-Mn-Ga films deposited by pulse laser deposition on Si wafers
Summary
Golub,a) Andriy Ya. Vovk,a) Leszek Malkinski, and Charles J. O’Connor Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana 70148. Zhenjun Wang and Jinke Tang Department of Physics, University of New Orleans, New Orleans, Louisiana 70148
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