Abstract
Thermoelectric effect in epitaxial graphene formed on the surface of a semiconductor is considered in the context of the Davydov model. The approach based on the Kubo formula for the conductivity and differential thermopower is used. It is shown that near the edges of the semiconductor bandgap, the thermopower of epitaxial graphene increases by more than four times as compared to the thermopower near the Dirac point. A possible explanation of this effect is given.
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