Abstract
We studied the grain growth in Ni-mediated crystallization of amorphous silicon (a-Si) films with various thicknesses. The Ni particles with density of 3.39 X 10 1 3 cm - 2 was deposited on a-Si and this was annealed at 580°C for 15 min. The grain size of the crystallized poly-Si increases from 25 to 104 μm as the thickness of a-Si increases from 20 to 300 nm. The grain size has a linear relationship with the a-Si thickness. This can be understood on the basis of the cylindrical seed formation and subsequent cylindrical, lateral grain growth. A cylindrical grain was found in atomic force microscope image of a partially crystallized a-Si after the Secco etch of surrounding a-Si phase.
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