Abstract
We studied the Ni-mediated crystallization of amorphous silicon (a-Si) as a function of its thickness. It was found that the orientation of the poly-Si changed from [110] to [001] when its thickness reduced down to 16 nm. This was confirmed by the analysis of electron backscattered diffraction pattern. The growth of (100)-oriented poly-Si is due to the predominant formation of [001] nuclei in a thin a-Si network because of its smaller crystalline size compared to that of [110] nuclei.
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