Anomalous Hall effect and topological Hall effect in the noncollinear antiferromagnetV0.3NbS2

Abstract

The recent discoveries of large anomalous Hall effect (AHE) in antiferromagnets (AFMs) have brought intense study in theories and experiments. Special attention has also been given to the topic of topological Hall effect (THE). Both of them provide a good platform for understanding the interplay between magnetism and transport characteristics. Here, we report the magnetic and electrical transport properties of a layered AFM ${\mathrm{V}}_{0.3}{\mathrm{NbS}}_{2}$ single crystal. It orders antiferromagnetically below ${T}_{N1}\ensuremath{\sim}53\phantom{\rule{0.16em}{0ex}}\mathrm{K}$ and exhibits weak magnetic hysteresis loop with a tiny net magnetization ($\ensuremath{\approx}16\phantom{\rule{0.16em}{0ex}}m{\ensuremath{\mu}}_{B}/\mathrm{V}$) along the $c$ axis as a result of canted antiferromagnetic configuration. Of particular interest is the realization of AHE in such AFMs with a near-perfect cancellation of moment, which probably originates from the contribution of nonzero Berry curvature. THE is detected at low temperatures, which acts as the probe of spin reorientation in the magnetization process induced by field. The magnetoresistance shows a weak irreversible behavior near zero field, consistent with the hysteresis loop in magnetization and Hall resistivity. It presents a negative value below 7 T, which is ascribed to the spin-dependent scattering. The observation of anomalous transport in ${\mathrm{V}}_{0.3}{\mathrm{NbS}}_{2}$ serves as a platform for studying AHE within AFMs.