Abstract
Hall data on two low compensation n-type InP epilayers are presented. Despite an exceptionally large 77-K Hall mobility, the corresponding room-temperature value is too low and strong high-temperature electronic excitation to the conduction band is observed. These features are explained with a model accounting for a deep center or complex, with 80 meV binding energy, that acts as a strong scatterer when ionized and is electrically inactive when neutral. Excellent agreement with experiment is obtained in the whole temperature range for both the Hall mobility and the Hall electronic concentration. The 77-K Hall mobility of the samples does not appear to be a measure of their purity.
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