Abstract
The anomalous drain-induced barrier lowering (DIBL) effect of long-channel thin-film transistors (TFTs) with a light shield (LS) is investigated by two-dimensional (2D) device simulation. In long-channel TFTs with a LS, which is long enough to neglect the DIBL effect and the floating body effect, a decrease of threshold voltage (V th) was observed at high drain voltages. The V th lowering is due to the large potential of the LS induced by the high drain voltage, which lowers the height of the source potential barrier. It is found that the LS-induced DIBL effect can be larger as the length of the LS increases or the thickness of the buried oxide decreases.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
