Abstract
Variations of nonequilibrium carriers' lifetime in ion implanted silicon and germanium single crystal plates are observed and studied by means of microwave photoconductivity. Sufficient changes are detected at a long distance of 1–10 mm from the region of direct action of an ion beam in the plate plane. Also investigated is the influence of pulsed laser annealing of the ion-implanted silicon and germanium surfaces on nonequilibrium carriers' lifetime. Discussed are the pronounced anisotropy of the sideways long-range effect of ion implantation and a possible mechanism of defect dynamics associated with the dislocation drift.
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