Abstract
We present the magnetic, transport, and structural properties of GaMnP with different Mn concentrations prepared by ion implantation and pulsed laser annealing. The Curie temperature increases with Mn concentration and the samples show in-plane magnetic anisotropy due to the in-plane compressive strain in the GaMnP layer. Anomalous Hall effect and negative magnetoresistance are observed, indicating the carrier mediated nature of the ferromagnetism in GaMnP. According to the micro-Raman spectroscopy data after pulsed laser annealing, the implanted layer has been fully recrystallized and the carrier concentration (hole) increases with Mn concentration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.