Abstract
Quantum size effects such as the modulation of activation energy have been observed and investigated in hydrogenated microcrystalline silicon (μc-Si:H)/hydrogenated amorphous silicon (a-Si:H) microstructure-modulated superlattices. The longitudinal dark conductivity changes anomalously around a temperature in the temperature dependence of the longitudinal dark conductivity for these superlattices. Studies indicate that these superlattices exhibit negative resistance above room temperature. We owe the anomalous conductivity phenomenon to the multibarrier resonant tunneling through the μc-Si:H/a-Si:H multiple-quantum-well structure. By considering the resonant tunneling effects, the anomalous conductivity behavior can be successfully explained.
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