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Abstract
We have observed charge trapping phenomena in thin films of cerium oxide on n-type germanium (Ge) substrate under constant voltage stress (CVS) condition. The measured shift of the flatband voltage of a high frequency C-V curve immediately after each CVS cycle, was utilized as a method to study the capture dynamics of both preexisting and stress induced oxide defects. At low stress electric field, it is the creation of new interface traps that dominates the trapping characteristics of the corresponding metal-oxide semiconductor capacitors. At higher stress electric field, negative charges are trapped on preexisting traps uniformly located in the bulk of the oxide. From data analysis, the capture cross section of the traps is estimated to be around 1×10−19cm2 which indicates neutral traps possibly related to H+ species and/or oxygen vacancies.
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