Abstract
Smooth titanium films were deposited by cathodic sputtering on glass substrates in order to avoid the more sophisticated polishing procedure of bulk titanium. The titanium films were then anodised in a sulphuric acid solution, using two different procedures: galvanostatic (1.5 mA/cm 2) and potentiostatic (10 V vs. Ag–AgCl) conditions. Atomic force microscopy (AFM) shows that the potentiostatic TiO 2 is rougher than the galvanostatic one. Mott-Schottky experiments confirm the n-type semiconductor behaviour of both TiO 2 films. However, differences between their flat-band potentials and their donor concentration values are apparently due to this difference of roughness. Finally, electrochemical quartz crystal microbalance (EQCM) measurements were carried out and appeared necessary to study the kinetics of the TiO 2 growth.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
