Abstract
We present porous InP formation in neutral NaCl solution. N-type InP wafers were etched at linear sweep voltammetry and at constant potential, respectively. The results showed that the potential 7.0–8.5 V is suitable for forming the regular pores of InP. The reaction that the eight holes are used to dissolve one InP molecule was confirmed by our experimental results. The crystallographically oriented pores of InP formed were suggested to be the synergic effect between surface state and effect of the surface curvature. The current-line oriented pores formed were ascribed to the effect of surface curvature.
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