Abstract
A comprehensive study has been performed on the light-emitting properties of porous silicon (PSi) films formed by anodic etching. PSi films are investigated using photoluminescence (PL), PL excitation, and X-ray photoelectron spectroscopy (XPS). The PL emission features are strongly dependent on the anodic current density. Analysis of the PL spectrum suggests the existence of two different emission mechanisms in the PSi layers: An efficient mechanism that is usually observed at higher temperatures and one that exhibits a multiple-peak structure and appears only at low temperatures , even at an excitation energy far from the PL resonance band (1.5–2.4 eV). The high temperature emission can be interpreted as being due to the quantum-confinement effect, i.e., relaxation of the momentum conservation at and above the indirect absorption edge (supra- emission), while the lower temperature PL emission is explained by the classical configurational-coordinate model with a lattice vibronic quantum of . The XPS data indicate that the short-range order is important in understanding the optical spectra not only for the amorphous substance but also for the nanocrystalline substance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
