Abstract
A simple process to grow anodically high quality Al2O3 films on InP using AGW electrolyte is described. Quasi-static and dynamic measurements of the anodic Al2O3/InP MIS interface gave consistent results and indicated that the distribution of interface states was U-shaped in the upper half of the forbidden gap with minimum density of the order of 1011 cm-2 eV-1. Surface Fermi level can be brought up as close as 0.05 eV to the conduction band edge. MISFETs, fabricated directly on semiinsulating InP substrates, operate in enhancement-mode with good saturation characteristics and with an effective mobility of about 850 cm2/V·s.
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