Abstract
Ion channeling and electrical characterization techniques have been used in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. A low energy thermally activated process (0.15–0.28 eV) is clearly observed after annealing at low temperature (≤500 °C). This electrical activation mechanism is found to be well described by a local relaxation model involving point defect migration. It is shown that in order to achieve a complete electrical activation of the implanted impurities, an annealing must be performed at temperatures higher than 700 °C.
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