Abstract
Annealing temperature effects on PMN-PT structural, dielectric, ferroelectric and electromechanical properties have been investigated. PMN-PT thin films deposited by sputtering, with 30% lead titanate, were successfully crystallized from 450 to 700°C without any pyrochlore phase by conventional annealing. It is shown that quality of material improves gradually in this temperature range, which promotes an enhancement of the electrical properties. Evolutions of piezoelectric and electrostrictive coefficients with annealing temperature are determined. The permittivity of films annealed at 450°C remain excellent compared with most dielectric materials obtained at this low crystallization temperature. This property could be very promising for “high k” integrated capacitors.
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