Annealing studies of effective trapping times in silicon detectors

Abstract

Annealing of effective trapping times of electrons and holes in neutron irradiated silicon detectors was measured at different temperatures 40, 60, 80 ° C . The evolution of effective trapping times seems to be governed by the first-order process. The effective trapping probability of holes was found to increase by 40% and of electrons to decrease by 20% during annealing. The time constants are of order 600 min at 60 ° C . The scaling to different temperatures can be obtained from Arrhenius relation with activation energies of around 1 eV.