Abstract
Experimental study of the reverse annealing of the effective concentration of ionized space charges (N/sub eff/, also called effective doping or impurity concentration) of neutron irradiated high resistivity silicon detectors fabricated on wafers with various thermal oxides has been conducted at room temperature (RT) and elevated temperature (ET). Various thermal oxidations with temperatures ranging from 975/spl deg/C to 1200/spl deg/C with and without trichlorethane (TCA), which result in different concentrations of oxygen and carbon impurities, have been used. It has been found that, the RT annealing of the N/sub eff/ is hindered initially (t<42 days after irradiation) for detectors made on the oxides with high carbon concentrations, and there was no carbon effect on the long term (t>42 days after irradiation) N/sub eff/ reverse annealing. No apparent effect of oxygen on the stability of N/sub eff/ has been observed at RT. At elevated temperature (80/spl deg/C), no significant difference in annealing behavior has been found for detectors fabricated on silicon wafers with various thermal oxides. It is apparent that for the initial stages (first and/or second) of N/sub eff/ reverse annealing, there may be no dependence on the oxygen and carbon concentrations in the ranges studied.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Published Version
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