Annealing of High Dose Sb‐Implanted Single‐Crystal Silicon

Abstract

High doses of Sb implanted in silicon and then annealed at a temperature range between 800° and 1200°C cause Sb precipitation and extrinsic diffusion. Sb precipitation has not been completed at temperatures between 800° and 1000°C for 60–400 min duration; a supersaturation of substitutional Sb is detected under the same conditions. The oxidation of such samples causes Sb segregation and anomalous oxide growth. Residual crystal damage after annealing can be observed.