Abstract
Annealing of Hall-mobility changes in n-type germanium irradiated with 1 MeV electrons at 85°K was investigated using an isochronal technique. Two annealing stages which have been reported earlier were confirmed and separated. One stage at above 100°K is connected with ``contact'' annealing, and a second one close to 140°K is caused by bulk annealing. The latter stage corresponds to the stage found already by J. C. Pigg for gamma irradiation.
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