Abstract
Isochronal annealing of the defect induced in germanium by electrons of 10, 5 or 1.5 MeV or fast neutrons was studied. For the case of crystals irradiated with 10 MeV or 5 MeV electrons, an annealing stage was observed in the range 180 K–240 K. The stage was observed in all specimens doped with antimony, arsenic or phosphorus after irradiation with 10 MeV electrons, but it was not observed for crystals irradiated with 1.5 MeV electrons. These behaviours were discussed and it was concluded that the defect which anneals in the stage is considered to be a stable vacancy-interstitial pair. Considering from the fact that the annealing in the range 260 K–480 K was independent of irradiating energies, the induced defects by 10 MeV electron irradiation are of the same kind as those induced by 1.5 MeV electron irradiation except for the stable vacancy-interstitial pair which anneals near 200 K.
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