Abstract
Ultra-pure n-type (8×1013cm-3), 99 μm thick epitaxial films of 4H SiC were electron irradiated at 170 keV with a fluence of 5×1016cm-2or at 1 MeV with a fluence of 1×1015cm-2in various geometries. Low temperature photoluminescence (LTPL) spectra and microwave photoconductance (μPCD) lifetime measurements were obtained on all samples prior to annealing and after annealing in Argon in free standing mode or on a POCO carbon platform, every 50°C from 1100°C to 1500°C. No improvement in carrier lifetime was obtained. Spurious lines attributable to the use of a Genesis CX 3550Å laser are also reported.
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