Abstract
A deep level transient spectroscopy (DLTS) study of electrically active defects in electronirradiated silicon detectors has been performed. Two types of materials havebeen studied and compared: carbon-lean magnetic Czochralski (MCZ-) Si, andhigh purity, diffusion oxygenated float-zone (DOFZ-) Si. In both materials weobserved an earlier reported shift in position of peaks associated with the divacancy(V2) at250–325 °C, indicating a gradualtransition from V2 to thedivacancy–oxygen complex (V2O). Heat treatments at higher temperatures reveal a difference in annealingbehaviour of defects in DOFZ- and MCZ-Si. It is observed that VO andV2O anneal with a higher rate in DOFZ-Si. The appearance of a hydrogen related level only inthe DOFZ-Si reveals a small presence of H and it is suggested that the difference inannealing behaviour is due to defect interaction with H in the DOFZ-Si. Our findingsalso suggest that dissociation may be a main mechanism for the annealing ofV2O in MCZ-Si.
Published Version
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