Abstract
To solve some problems existing in PZT films, such as: large residual stresses, interface diffusion, and lead loss, etc., which were caused by high post-annealing temperatures, and to obtain thin films with high-preferred orientation and uniform size grain and dense microstructure, different technological conditions of microwave plasma assisted post-annealing had been pilot studied. X-ray diffraction was used to analyze the crystal structures of the films. Transmission electronic microscope was used to analyze the surface and the interface morphology of the films. Ferroelectric properties were showed by measuring the remnant polarization and the leakage current dependence of electric field. The results indicated that it was good for reducing lead loss and annealing temperature of PZT films by microwave plasma assisted annealing. Ferroelectric properties of the film could also be enhanced by this pilot annealing method.
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