Abstract
Two-dimensional metal dichalcogenides thin films have been the theme of concentrated exploration due to their tunable optoelectronic properties that upsurged photosensing device applications. Alteration in deposition/synthesis methods and pre/post treatment given to thin film by which its capability to respond against broad spectral range has received incredible consideration. Here, first time we report the influence of annealing on physical and photodetection properties of thermally evaporated SnSe2 thin films. EDAX confirmed stoichiometry of SnSe2 powder. Deposited thin films are slowly vacuum annealed at 50°, 100°, 150° and 200 °C for 2 h. XRD pattern demonstrated annealing induced phase transformation from amorphous to polycrystalline thin film. UV–Vis-NIR spectroscopy displayed red shift in characteristic peak due to annealing. Photodetection properties presented decent photosensing ability of thin film photodetectors. Among all thin films, 150 °C annealed thin film displayed superior photoresponsivity against switched illumination that makes it suitable for future optical switching device. [Display omitted]
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