Abstract
Abstract This work reports thermal annealing induced effect on the structural, optical, chemical and ferroelectric properties of ion-beam sputtered lead-free ferroelectric 0.5 Ba(Zr0.2Ti0.8)O3 – 0.5 (Ba0.7Ca0.3)TiO3-δ (0.5BZT–0.5BCT) thin films. X-ray diffraction studies reveal that the tetragonality increases with the annealing temperature (Ta), while photoluminescence and X-ray photoelectron spectroscopy studies confirm that this effect is associated with the annihilation of the oxygen vacancies as well as changes in the Ba2+ coordination. The films annealed at 750 °C show a remarkable remnant polarization of Pr = 45.0 μC/cm2, with a coercive field of 32 kV/cm. The temperature dependence of the spontaneous polarization of the 0.5BZT–0.5BCT film reveals a mean field behavior of the polarization and the fatigue study reveals that Pr only decreases 3% after passing 109 cycles. Therefore the high remnant polarization and its high Pr stability make these films as promising candidates for memory applications.
Published Version
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