Abstract
AbstractThe post‐growth annealing behaviour of Ga(NAsP) multi quantum well heterostructures (MQWHs) grown pseudomorphically strained to GaP substrate has been investigated. The optical properties as well as the structural crystal quality of the novel dilute nitride show an obvious dependence on the applied annealing temperature. Photoluminescence (PL) measurements reveal a step‐like blue shift of the PL peak position in line with an increase of PL intensity with rising annealing temperature. The PL line width decreases to a mini‐ mal value for an optimized heating temperature around 800 °C. This annealing behaviour of the Ga(NAsP)/GaP‐MQWHs up to 850 °C is quite typical for a dilute nitride, however, the functional dependence of the integrated intensity above 850 °C is unusual. The increase of the PL line width above 850 °C suggests a deterioration of the crystalline MQW quality, but transmission electron microscopy (TEM) and high resolution X‐ray diffraction (XRD) prove the opposite. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
