Annealing Effects on MgO Films Grown using e-beam Evaporation

Jitendra Pal Singh,Lalit Kumar Gupta

doi:10.33889/10.33889/ijmems.2019.4.3-049

Jitendra Pal Singh, Lalit Kumar Gupta

Open Access

https://doi.org/10.33889/10.33889/ijmems.2019.4.3-049

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Abstract

Present work investigates the annealing effects on MgO thin films deposited using e-beam evaporation method. MgO thin films of thickness 5 and 50 nm were evaporated from MgO-pellet in ultra-high vacuum (2×10-8 Torr). As deposited thin films exhibit coordination similar to MgO bulk as envisaged from near edge X-ray absorption fine structure measurements. As deposited films were annealed at 300, 400 and 500oC in open environment. Thickness of films remain unaltered with annealing within experimental error. Raman spectroscopic measurements further confirm the presence of bands associated with Mg-O bonding at such low thicknesses.

Highlights

In past few years, MgO has been material of great interest with the increasing demand over spintronic materials and observation of defect induced ferromagnetism (DIF)
It has been seen that DIF depends upon the pre and post synthesis treatment as well as method of deposition (Singh and Chae, 2017; Pathak et al, 2017)
Recent reports show the presence of unusual magnetic properties in MgO, study of MgO is pronounced for the understanding of newly emerging field of do ferromagnetism

Summary

Introduction

MgO has been material of great interest with the increasing demand over spintronic materials and observation of defect induced ferromagnetism (DIF). Recent reports show the presence of unusual magnetic properties in MgO, study of MgO is pronounced for the understanding of newly emerging field of do ferromagnetism This motivates number of researchers to investigate this phenomenon in this material under different treatment (Ma et al, 2013; Cao et al, 2017; Qi et al, 2017). Near edge X-ray absorption fine structure (NEXAFS) of any material is an important tool to get information of local co-ordination, valence state of constituent ions (Singh et al, 2018a; Sharma et al, 2018) These measurements are suitable to characterize as-deposited films. Present work investigates annealing effects on e-beam evaporated MgO thin films using RBS and Raman spectroscopic measurements. 2. Experimental Details Magnesium oxide thin films of thickness 5 and 50 nm were grown by e-beam evaporation method on silicon substrate. The system consists of Ar ion laser with 514.5 nm wavelength and 50 mw power

Results and Discussion

Annealing

Raman Spectroscopic Measurements Figure 4 shows the

Conclusion