9 - Synthesis of metal oxide semiconductors using the evaporation technique

Abstract

Metal oxide semiconductors (MOS) do not seem to be limited to conventional applications and show potential strength for many industries as well as research laboratories. Material properties and essential advantages derived from them such as morphology, large band gap, conductivity, chemical stability, low cost, and so forth are the key factors for their emerging applications. In this chapter, we will discuss the thin film synthesis of oxide semiconductors by thermal evaporation and e-beam evaporation method. Researchers have paid much attention in investigating the properties of MOS using various synthesis methods. Despite the benefits of other synthesis methods, which have been used to tune the properties of thin film, e-beam evaporation and thermal evaporation methods played an important role in the synthesis of MOS. This chapter gives an idea about the tuning of the properties of MOS thin films using evaporation methods.