Annealing Effects on Al and AN-Si Contacts with 3C–SiC

Abstract

Annealing effects on the current-voltage characteristics of Al and Al–Si contacts with n-type and p-type 3C-SiC films, epitaxially grown on Si by chemical vapor deposition, have been investigated. Al electrodes on n-type 3C-SiC show ohmic characteristics stable up to 400°C, but show distinct rectifying characteristics with annealing at 900°C. To the contrary, Al on p-type 3C-SiC clearly changes from non-ohmic into ohmic with annealing at 900°C. Al–Si alloys, which are usually used as ohmic electrodes for p-type SiC, show same behavior as AN on n-type 3C-SiC. These results suggest the diffused Al atoms to yield a certain p-type layer.