Abstract
3C–SiC is a promising platform for semiconductor spintronics because it consists of light group-IV elements and has a zinc blende structure. To demonstrate spin transport in this attractive semiconductor, we conducted an experiment of spin-pump-induced spin transport through n-type 3C–SiC. A spin current is injected from Ni80Fe20 into the SiC channel under ferromagnetic resonance of the Ni80Fe20. The DC electromotive force caused by the inverse spin Hall effect in an adjacent metal detector attached to the SiC is detected as a manifestation of the spin current transport. This indicates 1.2-μm-long spin transport through the n-type 3C–SiC at room temperature. This achievement is the first step in the investigation of the physics of 3C–SiC for further spintronics study and its application.
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