Abstract
Nitrogen doped indium oxide (InON) and indium tin oxide (ITON) thin films were fabricated with reactive sputtering in nitrogen-rich plasmas for high temperature thermocouples. Different annealing processes were applied to improve the performance of indium oxide-based thin film thermocouples. The microstructural changes in the films were revealed by X-ray photoelectron spectroscopy (XPS). Metastably retained nitrogen in as-deposited film was transformed into In2O3 and/or oxynitrides after annealing. And significant improvement of linearity and high temperature stability was achieved in N2-Air annealed ITO thin-film thermocouples.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
