Abstract
Refractory thin film thermocouples can provide more accurate surface temperature measurement and faster response with excellent chemical and electrical stability at high temperatures in harsh oxidizing environment. Indium tin oxide (ITO) thin films were fabricated by radio frequency magnetron sputtering in gas mixture of Ar and N2. The introduction of nitrogen results in significant variations of the electrical and thermoelectric property of ITO thin films. This nitrogen doped ITO thin film was used as negative thermal element to form ITON:Pt thin film thermocouple on Ni-based superalloy substrate. The stability and thermoelectric performance of this thin film thermocouple was investigated up to 1000 °C.
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